Modelling of millimeter wave resonant tunnelling diode based oscillators

Physical and electromagnetic modelling of double barriers InGaAs/AlAs resonant tunneling diode has been carried out using 9 μm
²
mesa devices with a peak current density of 1.2 mA/μm
²
integrated with a coplanar waveguide resonator. A 100 GHz oscillator was realized and achieved an output power of 100 μW through exploiting the negative differential resistance feature of the diode. Validation of the diode's equivalent circuit model was experimentally verified using on-wafer S-parameter measurements up to 40 GHz. The circuit modelling was performed using advanced design system software. To ensure practical circuit's performance, all parasitic elements associated with the passive components were taken into account. The influence of the stabilizing resistance on the extracted power was also investigated.