Electron mobility in thin In0.53Ga0.47As channel

Channel thickness T
_CH
dependence of electron mobility μ
_EFF
in thin In
_0.53
Ga
_0.47
As channels was investigated at temperatures T from 35 to 300 K using conventional parametric and pulsed I
_D
-measurements, including a novel technique with time resolution down to 10 ns. It is show that accurate mobility measurements can be obtained using low T and/or fast pulsed measurements, thus avoiding significant underestimations of μ
_EFF
due to charge trapping with slow/parametric measurements. Furthermore, annealing is demonstrated to strongly suppress charge trapping, which results in μ
_EFF
= 1015 cm
²
/Vs at T
_CH
= 7.1 nm, carrier density N
_s
= 3 × 10
¹²
cm
^-2
, and T = 300 K. We demonstrate that room-temperature μ
_EFF
degrades by less than 10% as T
_CH
is scaled from 300 nm down to 7 nm, thus indicating that there is no “mobility bottleneck” down to T
_CH
= 7 nm.