Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices

Recent research progresses on dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe material systems are reviewed, which are relevant to SiGe-based semiconductor devices including SiGe PNP hetero-junction bipolar transistors, metal-oxide-semiconductor field-effect transistors, and Ge-on-Si lasers. Experiment data and continuum modeling are discussed.