Low threshold current, high efficiency InGaAsPN based long-wavelength quantum well lasers

Long wavelength (/spl lambda//spl sim/1.3 /spl mu/m) lasers grown on GaAs using narrow bandgap InGaAsN alloys are the subject of intense material and device research. A high operating temperature range for InGaAsN/GaAs compared to InGaAsP/InP quantum well lasers, and the possibility of fabricating low-cost long-wavelength vertical cavity surface emitting lasers (VCSELs) on GaAs, make the mixed-nitrides attractive for use in uncooled sources for fiber optic communication networks. Here we report record low threshold current density J/sub TH/=2.5 kA/cm/sup 2/ at /spl lambda//spl sim/1.3 /spl mu/m, and record high output powers for nitrogen based quantum well lasers.