High performance 0.25 /spl mu/m T-gate SiGe-n-MODFET

The authors present an n-type hetero-transistor MODFET with improved DC- and RF-characteristics. The layer sequence of the SiGe T-gate n-MODFET is grown by solid source molecular beam epitaxy (MBE) on a high resistivity p-type [100] Si substrate.