Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

We report unique programming characteristics of a nanocrystal memory cell using a high-density SiGe nanocrystal array incorporated in the gate oxide of a MOSFET. The threshold voltage shift of the nanocrystal memory cell showed multiple step-like saturation behavior with respect to the write time. Capacitive coupling among very closely spaced nanocrystals seems to play a significant role in the tunneling process of single electron from the channel into the nanocrystal.