A nanoscale ohmic contact for nanoelectronic devices

In this presentation, we report the development and characterization of low-resistance nanometer scale ohmic contacts which provide suitable characteristics for application in nanoelectronic semiconductor devices. The nanocontact structure employs a heterostructure comparable to that used in previous large-area studies of a low resistance, non-alloyed ohmic contact, namely a thin (2-10 nm) cap layer of low-temperature grown GaAs (LTG:GaAs) on a heavily doped n-type GaAs layer.