Experiment and analysis of transient ionizing radiation effects in 0.5um bulk CMOS buffer

A Testing system for transient irradiation experiment is designed to explore the transient ionizing radiation effects in an 8bit three state output bidirectional buffer. Signal responses of this circuit irradiated with high dose rate gamma rays are obtained. In particular, changes of output and supply voltage for the circuit are focused. The experiment results show that the recovery situation of signal depends on the disturbance-rejecting capability of supply voltage.