Heterogeneous stacking silicon controlled rectifier design with improved ESD performance

A novel design consisting of a heterogeneous stacking of silicon control rectifier is proposed in this paper. A latch-up free design in a high voltage BCDMOS process is demonstrated. Structures based on this method are compared with conventionally stacked SCR structure. Comprehensive characterization, including DC and transmission line pulsing (TLP), is undertaken to demonstrate the performance.