Quantum modeling of transport theory in a 1-D nano device

As the device dimensions become smaller (less than the mean free path of the carrier), conventional techniques like classical drift diffusion model become invalid for carrier transport. In this paper the Quantum Transport is modelled using NEGF formalism. The device modeling is done using 1 dimensional analysis which involves the understanding of the physical behavior of the device. An n
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— n
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— n
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resistor is used as the device under test and using Quantum Transport Theory, various parameters like electron concentration, the current through the device is calculated from the Density Matrix. NEGF formalism provides the required Density Matrix of the device.