Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets

We report on chemical vapor deposited (CVD) MoS
₂
radio frequency (RF) transistors with a record f
_T
of 20 GHz and f
_max
of 11.4 GHz, and the largest high-field saturation velocity, ν
_sat
= 1.88 × 10
⁶
cm/s, in MoS
₂
reported so far. The gate-first approach, facilitated by cm-scale CVD MoS
₂
, offers enhancement mode operation, I
_ON
/I
_OFF
ratio of 10
⁸
, and the highest reported transconductance (g
_m
) of 70 μS/μm. The intrinsic f
_T
(f
_max
) obtained here is 3X (2X) greater than previously reported top-gated CVD MoS
₂
RF FETs. With as-measured S-parameters, we demonstrate the design of a GHz MoS
₂
-based RF amplifier. This amplifier has gain greater than 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of ~10 mW.