Fabrication of high Q factor integrated passive devices based on embedded Fan-out wafer level package

This paper addresses one of the most advanced technologies that meet the demand for the miniaturization of modules and devices with increased performance. In this paper, the glass-based inductor whose Q factor is up to 60 can be prepared by picking glass as the substrate and using the trough glass via technology to form the three-dimensional glass inductor to reduce MOS parasitic capacitor losses. Embedded Fan-out wafer level package is carried out to integrate the discrete passive devices such as three-dimensional glass-based inductor on the silicon-based interposer as a filter, offering a new solution to realizing the high Q factor integrated passive devices with smaller package size and high integration.