Numerical analysis of czts solar cell with in2s3 buffer layer: a study of a czts based thin film solar cell, concerning the effects of several parameters on its electrical performance

The performance of Cu
2
ZnSnS
4
(CZTS) solar cell was investigated using a simulator called Solar Cell Capacitance Simulator(SCAPS). An n doped Zinc Oxide(n-ZnO)/Indium Sulfide(In
2
S
3
)/CZTS structure was used in the simulation. These materials are cheap and non-toxic which is an important factor keeping the idea of mass production in mind. The performance was recorded for different thicknesses of CZTS absorber layer, different thicknesses of the buffer layer and different values of acceptor density of CZTS. The thickness of the CZTS absorption layer was varied between 0.25–5.0μm, absorption layer carrier density was changed between 0–2∗10
¹⁴
cm
⁻³
and the buffer layer was 50nm thick. CZTS layer was thicker than In
2
S
3
in order to increase the photon absorption which will eventually produce electricity. These parameters were optimized and the best energy conversion efficiency obtained was obtained 19.23% (with V
oc
=0.835v, J
sc
=27.675mA/cm
²
, fill factor=83.22%). The study also includes the effect of high temperature of the proposed structure. Simulations show the favorable result which can help to prove the feasibility of highly efficient CZTS thin film solar cell.