A lateral P-SI-N diode SPDT switch for Ka-band applications

We report on lateral GaAs P-Semi-Insulator-N (P-SI-N) diode switches. The single P-SI-N structure showed an insertion loss of as low as 0.66 dB and the implemented SPDT switch comprised of the diodes exhibited an insertion loss of as low as 1.8 dB and isolation of 35 dB at 30 GHz. The proposed P-SI-N structure was easily formed by an ion-implantation technique and makes it possible to integrate with any active devices.