Millimeter-wave low noise metamorphic HEMT amplifiers and devices on GaAs substrates

An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMT on a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figure with gain greater than 24 dB across 27-32 GHz.