Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

This work shows results of multi-bias-point DC hot electron stress of power AlGaAs/GaAs HFETs. Both the gate reverse current and the drain-gate electric field are varied independently in order to study the bias dependence of device degradation. Numerical drift-diffusion simulations are used to explain the degradation behavior.