A single chip 1-W InP HEMT V-band module

We present a world-record V-band single-chip InP HEMT power amplifier module. The two-stage amplifier consists of two channels with 4.48 mm total output periphery. It was fabricated using TRW's 0.5 /spl mu/m InP HEMT MMIC production process. The two channels were combined by off-chip Wilkinson combiners. Under CW test condition, the amplifier delivered 1 W of output power with 21% power added efficiency and 15 dB associated gain at 62 GHz. The linear gain was 20 dB. We have also characterized a single channel MMIC power amplifier which delivered 515 mW output power with 25% power added efficiency at 62 GHz.