Room Temperature Temporary Bonding of Glass Substrates Based on SAB Method Using Si Intermediate Layer

This paper reports a new technology for bonding and debonding of glass substrates to handle ultrathin glass substrates in the fabrication process of display devices. Based on the surface activated bonding method, the glass substrates were bonded using deposited Si intermediate layers with less than 10 nm thickness by Ar ion beam sputtering. The bond between the glass substrates can endure the high-temperature process at 350-550 °C, using which thin-film transistors are formed on glass substrates during the fabrication process. The bond strength of the glass substrates can be controlled by manipulating the bonding conditions such as the surfaces for the Si deposition and surface activation by Ar ion beam treatments. We successfully decreased the bond strength after heating at 350 °C-550 °C, resulting in a feasible debonding after the high-temperature process. This bonding and debonding technique can be an effective alternative to handling ultrathin glass substrates in the fabrication process for display devices.