Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit Design

In this paper, we present an effective switching current model (I
_eff
) for inverter followed by a transmission gate structure (Inv-Tx) based on its switching trajectory. Unlike an inverter or NAND/NOR gates, where I
_eff
depends only on nMOSFET (pMOSFET) current for a falling (rising) transition, it is a function of both nMOSFET and pMOSFET currents for an Inv-Tx cell. The proposed model is verified against HSPICE simulations for a wide range of supply voltages and fan-outs at different technology nodes (e.g., 180, 130, and 65 nm). The model predicts the transition delay values with an average (maximum) error of 7% (11%) compared with HSPICE simulations. Synopsys TCAD Sentaurus simulations at 32-nm technology node are also used to validate the basic model assumptions. To demonstrate the utility of our model, design of some representative circuits while incorporating layout-dependent effects and inverse-narrow-width effect is presented. Finally, we show that a 256X1 multiplexer and a static D-flip-flop, with their transistor sizes and layout, optimized using the proposed model improves the performance of these circuits significantly over the conventional design methodologies.