Investigation of Carbon Nanotube-Based Through-Silicon Vias for PDN Applications

This paper presents a comprehensive investigation of the impedance characteristics of power distribution networks (PDNs) made of carbon nanotube through-silicon vias (CNT-TSVs). The equivalent circuit model of the CNT-TSV array is presented and validated through three-dimensional full-wave electromagnetic simulator up to 100 GHz. By virtue of the circuit model, the inductive properties of CNT-TSVs are characterized and compared for various physical parameters. Then, the PDN impedance characteristics of multiple stacked chip-PDNs with CNT-TSVs are captured and evaluated. It is found that the large CNT kinetic inductance may limit the PDN frequency range. Therefore, the fabrication of CNT-TSVs should be improved to increase the CNT density and reduce the contact resistance.