Extracting a closed-form I–V equation and noise analysis for CNFET in analog/RF applications

This paper aims to extract a closed-form current-voltage (I-V) equation for short channel carbon nanotube field-effect transistors (CNFETs) in saturation region based on the Stanford model and ballistic relation of one channel CNFET. In order to obtain the goal, firstly, the ballistic relation is simplified to a closed-form I-V equation, and then, it is verified by a linear system identification method based on least square (LS). In addition, an extended quantitative noise analysis is carried out in the circuit level and the results are confirmed in HSPICE based on the CNFET HSPICE model in which the noise sources implemented in Verilog-A are added to the model.