Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

Hole transport material (HTM) free and WO
_x
based perovskite solar cells are theoretically investigated by using drift-diffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.