Improvement of GMR characteristics of spin-valve films with a novel free layer

In order to obtain a large change in resistance, a free layer structure of Ta/NiFeTa/CoFe in spin-valve films was examined. The magnetoresistance properties and the thermal stabilities varied with the resistivity of NiFeTa and the crystallographic texture of the spin-valve film. For the structure of glass/Ta[5 nm]/(NiFe)/sub 88.5/Ta/sub 11.5/[5 nm]/CoFe[2.5 nm]/Cu[2.75 nm]/CoFe[2.5 nm]/IrMn[6 nm]/Ta[5 nm], the change in sheet resistance of 2.3 /spl Omega///spl square/ (MR ratio of 12.3%) and 2.0 /spl Omega///spl square/ (9.5%) were obtained before and after annealing at 280/spl deg/C for 5 hours, respectively.