An electrical model of spin field effect transistors for circuits design and performance analysis

In this work, we studied the characteristic of spin-FET by presenting an electrical model based on both theoretical and experimental results. We divide the working process of spin-FET into two parts: the first part is the spin injection and detection without the gate voltage. Since the Rashba effect is an intrinsic mechanism, the change of spin direction of the injected spin-polarized current still happens even if there is no extra electric field. The paper gives the calculation of the spin detection result taking into account the Rashba effect, spin injection, and spin accumulation. The second part is the gate voltage modulation. The electron spin precession angle is modulated by the spin-orbit interaction.