Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer

Spin-transfer-torque magnetoresistive random access memories using CoFeB-MgO based magnetic tunnel junctions with perpendicular easy axis (p-MTJs) are attracting much attention owing to their high potential in offering electronics with both low-power-consumption and high-performance [1-3].