Performance of four-terminal low-temperature polycrystalline-silicon thin-film transistors and their application to CMOS inverter on a glass substrate

High performance and low power dissipation low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) are indispensable for integrating circuits on a glass substrats. To control the threshold voltage of LT poly-Si TFTs, we employed four-tsrminal self-aligned planar embedded metal double-gate LT poly-Si TFTs using high quality lateral large grained thin poly-Si films. Successful operation of a CMOS inverter at V
_dd
= 1.0 V was achieved on a glass substrate.