Gate driver circuit with fast-falling structure for high-resolution applications

This work proposes a new gate driver circuit which utilizes hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) for high-resolution panels. By using one TFT to separate the output node from the capacitor in the gate driver circuit, the driving TFT can remain high speed to pull down the output signal. Simulation results verify that the falling time reduces over 20% without enlarging the size of the driving TFT.