Demonstration of Ga2O3 trench MOS-type Schottky barrier diodes

β-Ga
₂
O
₃
is a suitable material for next-generation high-power devices because it has excellent material properties and mass productivity. In the past, we have demonstrated field-plated Ga
₂
O
₃
Schottky barrier diodes (SBDs) with nearly ideal reverse characteristics limited mainly by the thermionic field emission (TFE) leakage current. [1] However, the TFE current, that is, leakage current, was very large because of the large electric field at the Schottky metal/semiconductor interface. Here, introducing a junction barrier controlled Schottky structure or trench MOS barrier structure is an effective way to decrease the electric field [2]. In this study, we succeeded in developing Ga
₂
O
₃
trench MOS-type SBDs (MOSSBDs) for the first time and examined their characteristics.