STT MTJ data-aware write boost design in 28nm process

With the development of IOT (Internet Of Things) and portable intelligent product markets, power consumption becomes the top priority of IC design in which memory devices always consume considerable power. Spin-torque-transfer (STT) switching magnetic tunnel junction (MTJ) shows great advantage in zero retention power, non-volatile, fast read/write speed, which can be a good candidate for embedded memory of these application. In this paper, we proposed a new kind of write assist circuit for STT MTJ memory. It can lift the writability with low voltage power source, and with Data aware design of writing 0 and 1, it can further reduce the dynamic power.