About the influence of parameters values technological fluctuation on the power MOSFET thermal mode

The paper considers the problem of the influence of technological fluctuation of the power MOSFET electrical and thermal parameters values on the operation thermal mode. The transistor model is described. The results of the simulation of the electrothermal processes occurring in the electronic switch circuit with a resistive load are presented. Dependences of the die temperature from the thermal resistance junction-case and drain-source on resistance are described for different electrical operating modes. The influence of the circuit electrical mode on the transistor thermal mode is shown.