Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μA/μm at Ioff = 100 nA/μm and VD = 0.5 V

We present vertical InAs nanowire MOSFETs on Si with an In
_0.7
Ga
_0.3
As drain. The devices show Ion and g
_m
/SS record performance for vertical MOSFETs and I
_off
below 1 nA/μm at V
_D
0.5 V. We show a device with g
_m
=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (g
_m
/SS) of 16. The device has I
_on
=330 μA/μm and 46 μA/μm at I
_off
100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and I
_on
=88 μA/μm at I
_off
1 nA/μm and V
_D
0.5 V.