Temperature characterizations on graphene-based gas sensors

This work studies the influence of temperature on graphene-based gas sensors via the structure of graphene field effect transistors (GFETs) for possible engineering design guidelines in sensor calibration and compensation. Temperature is an essential parameter affecting the sensor performances and needs to be fully characterized. The key discoveries from this study include: (1) fully characterized source-drain resistance of GFETs in the range of R.T. to 100°C under various gate voltages; (2) the effects of both temperature and humidity on GFETs, and (3) the fact that even at moderately elevated temperature of above ~60°C, the influence of humidity is significantly reduced. These results can be applied to develop desirable engineering configurations for the proper measurement schemes of GFET gas sensors operating under ambient environments.