An Aluminum Nitride on Silicon resonant MEMS accelerometer operating in ambient pressure

We present an Aluminum Nitride (AlN) on Silicon (Si) resonant MEMS accelerometer with a calibrated differential sensitivity of 387 ppm/g measured in ambient conditions in air. This marks the highest figure of sensitivity among piezoelectric AlN-based resonant accelerometers reported to date by nearly an order of magnitude. The device is composed of a seismic mass attached to a pair of identical triple beam tuning forks (TBTFs) vibrating in an out-of-phase mode at a resonant frequency of 137.6 kHz.