65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation

For the first time, 65 nm physical gate length NMOS devices combining heavy ion (gallium, indium) implanted pockets and low leakage, highly reliable 2 nm-thick gate oxide are reported. Indium pockets allow us to obtain 0.33 V threshold voltage, low off-state leakage current (<6/spl times/10/sup -7/ A//spl mu/m) devices, usable for 1.5 V operation. The weak influence of pockets on NMOSFET reliability is demonstrated: extrapolated lifetime of 65 nm indium pocket devices at 1.65 V drain bias exceeds 27 years, which is consistent with 1.5 V operation.