Atomistic simulations of ion implantation and diffusion

Improvements in atomistic simulations have made possible important advances in the understanding of transient enhanced diffusion. In this paper we discuss some of the issues involved in designing a simulator that can handle actual device-processing time and length scales, but also include atomic level detail. We also present a few results from a Monte Carlo simulator of implantation and annealing. Although we concentrate on Monte Carlo modeling, links to more detailed simulations such as molecular dynamics and first-principles methods and to experiments are essential. We discuss the influence of processing conditions, including the dose, dose-rate, and temperature during implantation.