An efficient steady-state simulation of class-E resonant inverter considering MOSFET parasitic components by using extended impedance method

In the previous studies, it has been shown that the steady-state operation of a class-E resonant inverter can be rapidly simulated in the frequency domain by extending the concept and mathematical form of electrical impedance. This paper provides a more comprehensive solution for the efficient simulation of practical class-E resonant inverter, which is driven by a MOSFET switch. The parasitic components, which might influence the operation of the resonant inverter, are taken into consideration in the new equivalent model. These important parasitic components include the linear gate-to-drain capacitance, the nonlinear drain-to-source capacitance, the body diode, etc. The efficient simulation is realized by generalizing the extended impedance method (EIM) to cope with the nonlinearity and multiple-sources problems. Both comparisons to the experimental result and PSpice time-domain simulation show the capability and efficiency of this EIM based solution towards the steady-state simulation of general class-E resonant inverter circuit.