Direct photo emission monitoring for analysis of IGBT destruction mechanism using streak camera

This paper proposes a direct photo emission monitoring during avalanche operation for IGBTs (Insulated Gate Bipolar Transistors) using a streak camera. IGBTs have been developed to improve trade-off relation between on-state losses and switching losses. And also reliability enhancement is very important issue. To enhance reliability, it is important to investigate avalanche phenomenon of IGBTs, directly. During avalanche operation, it is well known that visible light is emitted from the device. This is the study to succeed in observing photo emission directly from avalanche phenomena under UIS (Undamped Inductive Switching) condition of IGBTs. We have also measured moving emission region in edge termination area.