Design and fabrication of 3.3kV SiC MOSFETs for industrial applications

Due to their high power density and high temperature capabilities, Silicon Carbide MOSFETs are promising power semiconductor switches to improve efficiency and reduce system size for many industrial applications like traction drives and grid-tied renewable energy conversion. The adoption of SiC MOSFETs in these areas has been slowed by its high cost and the poor short-circuit robustness. In this report, we demonstrate 3.3kV SiC MOSFETs manufactured on 6-inch wafers with more than 90% yield. A design-of-experiments has been carried out to extract the resistance components of the SiC MOSFET and to explore the short-circuit robustness with different designs. The target design can withstand 5μs of short-circuit operation at a DC bus of 1.5kV, and has a low specific R
_{ds, on}
of 10 mΩ·cm
²
.