Numerical simulation of the complementary bipolar pair of transistors in the hydrodynamic approximation

In this paper, we consider the numerical simulation of vertical bipolar of NPN and PNP transistors with using TCAD Sentaurus software by Sinopsys company. This pair fabricated on complementary technology with a P-epitaxial layer. Estimates of the applicability of the hydrodynamic model in bipolar structures with breakdown voltages of 40-60V are obtained. The comparison of the physical parameters and characteristics in hydrodynamic and thermodynamic approximations with the experimental data of the test structure has showed. Obtain a result showed the satisfactory accuracy of TCAD modeling for practical purposes.