High-Performance Stacked Double-Layer N-Channel Poly-Si Nanosheet Multigate Thin-Film Transistors

A high-performance stacked double-layer N-channel poly-Si nanosheet (NS) multigate thin-film transistor (DLNS-TFT) is demonstrated successfully. The proposed device has low cost, is easy to fabricate, and is compatible with Si MOSFET, active-matrix organic light-emitting diode, and active-matrix liquid-crystal display fabrication. This DLNS-TFT reveals high driving current (> 10
⁵
A/um), high Ion/Ioff ratio (> 10
⁸
), high mobility (42 cm
²
/Vs), and low parasitic resistance, when compared with single-layer nanosheet TFT. The DLNS-TFT also has a high density and satisfies the driving current monolithic multilayer 3-D IC in the ITRS 2015 version technology roadmap to the year 2030.