Low-power low-noise inductorless front-end for IoT applications

This paper presents a 900 M low-power, low-noise receiver frontend implemented using TSMC 0.18-μm CMOS technology. The inductorless frontend comprises a low-noise amplifier (LNA) using bulk injection, a mixer, and an active balun operating in the subthreshold region. The front end achieves a conversion gain of 33.7 dB, and a 2.9 dB single sideband noise figure. The chip consumes 5.9 mA from a 0.9-V supply. The front end was simulated and fabricated using the TSMC 1P6M 0.18μm CMOS process.