Improving MOSFETs’ TID Tolerance Through Diamond Layout Style

This letter describes an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide semiconductor field-effect transistors (MOSFETs), regarding the same bias conditions during irradiation. The transistors were manufactured by using the 350 nm commercial bulk complementary metal-oxide semiconductor (CMOS) integrated-circuits (ICs) technology. The innovative hexagonal gate layout proposal can reduce the parameter deviations of TID effects in MOSFETs in, approximately, 30%, 400%, and 100% in terms of the threshold voltage, leakage drain current, and subthreshold slope, respectively, regarding the standard MOSFET counterparts. Therefore, the Diamond MOSFET can be considered as a low-cost alternative device to be used in space CMOS ICs applications.