A spillover effect of avalanche-generated electrons in buried p-channel MOSFET's

The authors describe a new mechanism for hot-electron resistance in buried p-channel MOSFETs, which is explained by the spillover of avalanche-generated electrons into the bulk. This effect was observed in a buried p-channel MOSFET formed in a retrograde n-well. It is shown that this effect reduces the hot-electron-induced device degradation even with the greater number of avalanche-generated electrons induced by high bulk doping.<
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