Performance improvement using radial junction photo diode detector for sensing application

Photodiodes (PD) converts light into electric signal. PDs are used for sensing, switching and opto-isolation application. PDs are normal `p-n' (PN) diode, `p-i-n' (PIN) PD and avalanche PD (APD). For sensing application, high current output and low response time with minimum dark current (Id) and less noise features are desirable. In this work PDs are designed by forming a radial junction that helps to improves carrier collection efficiency because of modified device geometry. Rise time (tr) and photo current (Iph) are considered as key parameters. The merits of radial junction PD (RJPD) over planar junction PD (PJPD) are discussed. The merits of PN RJPD can bring significant improvement for light detection in a PN PJ PD and it can replace the need of intrinsic layer. Simulation is done in TCAD tool, required material parameter files are used by forming tight meshing strategy.