Hardening of Split-Gate Power UMOSFET Against High-Power Microwave Radiation

In this letter, a high-power microwave (HPM) hardened structure for a split-gate enhanced power U-shaped trench-gate metal-oxide-semiconductor (SGE-UMOS) field-effect transistor is proposed. Also, a mathematical model of HPM induced voltage is established.Compared with the standard SGE-UMOS structure, the radiation immunity of the proposed structure has been improved by a value exceeding 200, with burnout time improving from 120 ns to 27.76 μs. Additionally, a detailed investigation is carried out by a 2-D numerical mixed mode simulation via ATLAS to optimize the HPM hardened SGE-UMOS structure. The simulation results demonstrate that a 106% improvement in the figure of merit (including the breakdown voltage and ON-resistance) is achieved in the optimized structure.