Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO
₂
/HfON). Additionally, the memory speed with ferroelectric polarization (~800ns) is more than three orders of magnitude faster than that of control trapping type.