InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs

Currently, there is high interest in extended wavelength emission from GaAs-based devices for compatibility with AlAs/GaAs distributed Bragg reflectors (DBRs) and selective oxidation for 1.3 /spl mu/m VCSELs. Our approach is using InGaAs quantum dots (QDs) which emit from 1.0 to 1.3 /spl mu/m depending on the growth technique. However, the optical gain from a single layer of QDs is relatively small making a 1.3 /spl mu/m QD VCSEL difficult to achieve. We present results on 1.3 /spl mu/m edge emitters based on InGaAs QDs as well as 1.07 /spl mu/m ground state VCSELs to demonstrate the great potential of the QDs for 1.3 /spl mu/m VCSELs.