Packaging IGBT modules by rapid sintering of nanosilver paste in a current way

Rapid sintering of nanosilver paste had been proposed to bond power chips in our previous work. It seems a potential good way to improve the efficiency of power module manufacturing because of the much shorter sintering time, i.e., 15 seconds. In this study, we tried the way of rapid sintering of nanosilver paste for bonding power chips in order to verify the feasibility of the rapid sintering method. Both the static and the dynamic performance of the IGBT modules using rapid sintered nanosilver as die attachment have been characterized at both room temperature and 150
^o
C. The results shows that this rapid sintering way could be used to bond power chips in a much shorter time to fabricate IGBT modules using nanosilver paste because of the comparable static and dynamic electrical properties as those of commercial IGBT modules with the same power rating from MacMic and Infineon.