ST-MRAM Fundamentals, Challenges, and Outlook

Magnetoresistive Random Access Memory (MRAM) technology was introduced into the market last decade in the form of Toggle MRAM, available in densities up to 16Mb. In the last few years, Spin-Torque MRAM, the next generation of Magnetic Tunnel Junction (MTJ) based memory, has become available offering higher density and bandwidth. This paper describes the device and design fundamentals, the associated challenges, and the outlook of this evolving MTJ based memory.