Atomically thin diffusion barriers for ultra-scaled Cu interconnects implemented by 2D materials

Sub-1 nm Cu difïusion barriers are realized by using transferred CVD-grown hexagonal boron nitride (h-BN) and directly deposited molybdenum disulfide (MoS
₂
), for the first time. Based on time-dependent dielectric breakdown measurements, the diffusion barrier properties of these 2D materials are explored to address the barrier/liner scaling challenge for the ultra-scaled interconnect technology. The predicted lifetime of devices with directly deposited 2D barriers can achieve 3 orders of magnitude improvement compared to control devices.